By I M Dharmadasa
This publication concentrates at the newest advancements in our realizing of solid-state gadget physics. the fabric awarded is principally experimental and in accordance with CdTe thin-film sun cells. It extends those new findings to CIGS thin-film sunlight cells and offers a brand new machine layout in keeping with graded bandgap multilayer sun cells. This layout has been experimentally verified utilizing the well-researched GaAs/AlGaAs procedure and preliminary units have proven striking machine parameters. those units are able to soaking up all radiation (UV, obvious, and infra-red) in the sun spectrum and combines "impact ionization" and "impurity photovoltaic" results. the enhanced equipment figuring out offered during this e-book may still influence and consultant destiny equipment layout and reasonably cheap thin-film sunlight panel manufacture.
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Additional resources for Advances in thin-film solar cells
12. 2 I-V Characteristics of a Solar Cell Under Illuminated Conditions The directions of electron ﬂow under dark and illuminated conditions are shown in the band diagrams in Fig. 13. 12 A schematic diagram of a Schottky barrier solar cell and its equivalent circuit. that the photo-generated current ﬂows in the opposite direction to the forward current under dark conditions. 11) where Isc denotes the short circuit current produced by the solar cell under illumination. 13 The direction of electron ﬂow during forward bias under dark conditions and when used as a solar cell device under illuminated conditions.
Both rectifying and ohmic electrical contacts can be incorporated in PV solar cells in order to maximise the internal electric ﬁeld present in these devices. 6 Metal-Insulator–Semiconductor Interfaces In general, the φb values obtained at MS interfaces are much smaller than those of p-n junctions for a given semiconductor. As indicated in Fig. 8, the Schottky barrier represents approximately half of a p-n junction and, hence, a lower φb . This disadvantage can be removed by incorporating an insulating layer, as shown in Fig.
In the cases of II-VI and I-III-VI2 materials (CuInSe2 , for example), intrinsic doping is possible by the variation of its composition. In the 03-Dharmadasa-c03 July 27, 2012 17:17 PSP Book - 9in x 6in Strengths and Advantages of Electrodeposition stoichiometric CuInSe2 material, 25% of the group-I element (Cu), 25% of the group-III element (In), and 50% of the group-VI element (Se) can be found. However, a slight increase of the group-I element makes the material p-type and a slight increase of the group-III element makes the material n-type in electrical conduction.